MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
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چکیده
منابع مشابه
MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphol...
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We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. ...
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Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles ~the nuclei of nanowires!. Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2015
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-015-1083-0